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Under the hood, the Galaxy S25 is powered globally by Qualcomm’s Snapdragon 8 Elite for Galaxy chipset paired with 12GB of RAM. The Galaxy S26 continues to target flagship-class performance. While Samsung has made internal refinements, overall speed should remain firmly in high-end territory for routine tasks, multitasking and mobile gaming.
带宽提升：TSV大幅缩短互连距离，显著提升数据传输速率，能够支持HBM4等超高带宽需求；延迟降低：桥接器内部的TSV路径比传统封装走线更短，有效降低数据通信延迟；功耗优化：短路径低电容，有助于降低整体系统功耗，符合高性能芯片的PPA（功耗、性能、面积）优化目标。